41013 tkim/60612 tkim/72011pa tkim tc-00002610 no.8987-1/9 http://onsemi.com semiconductor components industries, llc, 2013 april, 2013 sft1345 power mosfet ? 100v, ? 11a, 275m , p-channel single tp/tp-fa features ? on-resistance r ds (on)1=210m (typ.) ? input capacitance ciss=1020pf(typ.) ? 4v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --100 v gate-to-source voltage v gss 20 v drain current (dc) i d --11 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% --44 a allowable power dissipation p d 1.0 w tc=25 c35w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-004 7003-004 ordering number : EN8987b t1345 lot no. tl 1 3 2,4 ordering & package information marking electrical connection device package shipping memo sft1345-h tp (sc-64, to-251) 500pcs./bag pb free and halogen free sft1345-tl-h tp-fa (sc-63, to-252) 700pcs./reel packing type (tp-fa) : tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : gate 2 : drain 3 : source 4 : drain tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : gate 2 : drain 3 : source 4 : drain tp-fa sft1345-h sft1345-tl-h stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
sft1345 no.8987-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --100 v zero-gate voltage drain current i dss v ds =--100v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--5.5a 8.5 s static drain-to-source on-state resistance r ds (on)1 i d =--5.5a, v gs =--10v 210 275 m r ds (on)2 i d =--3a, v gs =--4.5v 225 315 m r ds (on)3 i d =--3a, v gs =--4v 235 330 m input capacitance ciss v ds =--20v, f=1mhz 1020 pf output capacitance coss 72 pf reverse transfer capacitance crss 43 pf turn-on delay time t d (on) see speci ed test circuit. 9.5 ns rise time t r 25 ns turn-off delay time t d (off) 105 ns fall time t f 55 ns total gate charge qg v ds =--50v, v gs =--10v, i d =--11a 21 nc gate-to-source charge qgs 3.6 nc gate-to-drain ?miller? charge qgd 4.5 nc diode forward voltage v sd i s =--11a, v gs =0v --0.93 --1.5 v switching time test circuit pw=10 s d.c. 1% p. g 50 g s d i d = --5.5a r l =9.1 v dd = --50v v out v in 0v --10v v in sft1345
sft1345 no.8987-3/9 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a it16541 it116542 0 0 -- 8 --11 --10 --1.0 --0.5 --4.0 --3.5 --2.0 --1.5 --3.0 --2.5 -- 6 -- 4 -- 2 0 --12 --10 --14 --16 -- 8 -- 6 -- 4 -- 2 0 --4.5 --4.0 --3.0 --3.5 --2.5 --0.5 --1.5 --1.0 --2.0 --3.5v --16.0v v gs = --3.0v tc= --25 c tc=75 c --25 c 25 c 25 c 75 c --10.0v --6.0v --4.0v --8.0v --4.5v tc=25 c single pulse v ds = --10v single pulse | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds i s -- v sd it16543 it16544 --50 --25 0 25 50 75 100 125 150 it16546 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --1.1 --0.3 --0.5 --0.7 --0.9 --0.001 --0.01 --10 --100 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 --0.1 --1.0 it16545 25 c -- 2 5 c tc=75 c --0.01 --0.1 23 57 --1.0 --10 --100 23 57 23 57 23 57 1.0 0.1 10 100 5 7 2 3 2 3 7 5 2 3 7 5 tc= --25 c 75 c 0 500 450 350 300 400 250 200 150 100 50 500 450 400 350 200 100 150 50 300 250 0 --16 --6 --14 --10 --2 --4 --8 --12 0 i d = --3a v gs = --10.0v, i d = --5.5a it16547 1.0 10 100 1000 3 2 2 5 7 3 2 5 7 5 7 3 --0.1 --1.0 --10 23 57 23 57 --100 23 57 v dd = --50v v gs = --10v t d (off) t r t d (on) 0 100 10 1000 10000 7 5 3 2 7 5 3 2 7 5 3 2 --20 --60 --70 --80 --90 --100 --10 --40 --50 --30 it16548 f=1mhz ciss coss crss 25 c t f v gs = --4.5v, i d = --3.0a v gs = --4.0v, i d = --3. 0a --5.5a v ds = --10v single pulse v gs =0v single pulse single pulse tc=25 c single pulse
sft1345 no.8987-4/9 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a it16550 --0.01 --0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --0.1 10 s 100 s 100ms 10ms 1ms dc operation --1.0 --10 --100 --100 2 3 57 2 3 57 2 3 57 2 3 57 --10 --100 operation in this area is limited by r ds (on). i d = --11a it116549 0 -- 1 -- 2 -- 3 -- 4 -- 6 -- 5 -- 7 -- 8 -- 9 --10 v ds = --50v i d = --11a 025 20 51015 i dp = --44a (pw 10 s) tc=25 c single pulse it16551 0 20 40 60 80 100 120 140 160 0.2 0 0.4 0.6 0.8 1.0 1.2 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it16552 40 35 30 20 25 10 15 5 0 0 20 40 60 80 100 120 140 160
sft1345 no.8987-5/9 taping speci cation sft1345-tl-h
sft1345 no.8987-6/9 outline drawing land pattern example sft1345-tl-h mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
sft1345 no.8987-7/9 bag packing speci cation sft1345-h
sft1345 no.8987-8/9 outline drawing sft1345-h mass (g) unit 0.315 * for reference mm
sft1345 ps no.8987-9/9 note on usage : since the sft1345 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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